All publications
Filters: author is A.Asenov [Clear All Filters]2009
2008
K.Kalna, N.Seoane, A.J.Garcia Loureiro, I.G.Thayne, A.Asenov,
" Benchmarking of Scaled InGaAs Implant-Free NanoMOSFETs",
IEEE Transactions on Electron Devices, vol. 55, issue 9, pp. 2297-2306, 2008 .
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M.Aldegunde, N.Seoane, A.J.García Loureiro, P.V.Sushko, A.L.Shluger, J.L.Gavartin, K.Kalna, A.Asenov,
"Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors",
Physical Review E, vol. 77, issue 5: The American Physical Society, pp. 056702 (9 pages), 2008 .
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2007
M.Aldegunde, A.J.García Loureiro, P.V.Sushko, A.L.Shluger, K.Kalna, A.Asenov,
"'Atomistic' Mesh Generation for the Simulation of Semiconductor Devices",
12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2007), Viena (Austria), Springer-Verlag Wien New York, pp. 97-100, 25/09/2007.
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2006
2005
A.J.García Loureiro, K.Kalna, A.Asenov,
"Efficient three-dimensional parallel simulations of PHEMTs",
International Journal of Numerical Modelling: Electronics networks, devices and field, vol. 18, issue 327-34, pp. 327-340, 2005 .
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N.Seoane, A.J.García Loureiro, K.Kalna, A.Asenov,
"Indium content fluctuations in the channel of a 120 nm PHEMT",
Proceedings of 7th International Conference on New Phenomena in Mesoscopic Sytems/5th International Conference on Surfaces and Interfaces in Mesoscopic Devices, Maui (Hawai), pp. 135-136, 2005 .
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2003
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