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Filters: author is K.Kalna [Clear All Filters]2011
N.Seoane, M.Aldegunde, R.Valín, A.J.García-Loureiro, K.Kalna,
"Drift-Diffusion Simulations of a 20 nm In0.53Ga0.47As Implant Free Quantum Well MOSFET",
8th Spanish Conference on Electron Devices, Palma de Mallorca, Spain, IEEE, pp. 155, 08/02/2011.
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M.Aldegunde, N.Seoane, A.J.García-Loureiro, K.Kalna,
"Efficient Monte Carlo Simulation of n-MOSFETs on Unstructured Meshes",
8th Spanish Conference on Electron Devices, Palma de Mallorca, Spain, IEEE, pp. 159, 08/02/2011.
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2009
2008
M.Aldegunde, A.J.García Loureiro, A.Martinez, K.Kalna,
"3D Monte Carlo Simulation of Tri-Gate MOSFETs Using Tetrahedral Finite Elements",
2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008), Hakone (Japan), pp. 153-156, 09/09/2008.
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K.Kalna, N.Seoane, A.J.Garcia Loureiro, I.G.Thayne, A.Asenov,
" Benchmarking of Scaled InGaAs Implant-Free NanoMOSFETs",
IEEE Transactions on Electron Devices, vol. 55, issue 9, pp. 2297-2306, 2008 .
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M.Aldegunde, N.Seoane, A.J.García Loureiro, P.V.Sushko, A.L.Shluger, J.L.Gavartin, K.Kalna, A.Asenov,
"Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors",
Physical Review E, vol. 77, issue 5: The American Physical Society, pp. 056702 (9 pages), 2008 .
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2007
M.Aldegunde, A.J.García Loureiro, P.V.Sushko, A.L.Shluger, K.Kalna, A.Asenov,
"'Atomistic' Mesh Generation for the Simulation of Semiconductor Devices",
12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2007), Viena (Austria), Springer-Verlag Wien New York, pp. 97-100, 25/09/2007.
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M.Aldegunde, A.J.García Loureiro, K.Kalna,
"3D Parallel Finite Element Monte Carlo Simulation of nano-MOSFETs",
6th International Conference on Large-Scale Scientific Computations (LSSC'07), Sozopol (Bulgaria), 05/06/2007.
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2006
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